GHHS065200AD is N-channel 650 V Power GaN HEMT based on proprietary E-mode GaN-onsilicon technology. The resulting product has extremely low on state resistance, very low input capacitance and zero reverse recovery charge, making it especially suitable for applications which require superior power density, ultra-high switching frequency and outstanding efficiency.

 650V GaN E-mode Power Transistor 

 Low 175 mΩ Resistance 

 Zero reverse-recovery charge 

 8 x 8 mm footprint, 0.85 mm profile 

 Minimized package inductance