The GHSD6P0008AL is a 10W (P3dB)，discrete GaN on SiC HEMT which operates from DC to 6 GHz.

⚫ Frequency: DC to 6 GHz 

⚫ Output Power(P3dB)1 : 8 W 

⚫ Linear Gain1: 23 dB 

⚫ Typical DE(P3dB)1 : 71 % 

⚫ Operating Voltage: 50 V 

⚫ Low thermal resistance package 

⚫ CW and Pulse capable Note 1: @ 2.6 GHz