The GHSD6P0008AD is a typical 8W (P3dB) at +50 V transistor，discrete GaN on SiC HEMT. Ideal for applications in massive MIMO systems, outdoor small cells and remote radio heads in the frequency range from DC to 6GHz. Available in DFN outline.

• Frequency: DC to 6 GHz 

• Typical Output Power (P3dB )1 : 8 W 

• Linear Gain1 : 22 dB • Typical DE 3dB1 : 73 % 

• Operating Voltage: 50 V • Low thermal resistance package 

• CW and Pulse capable Note 1: @ 2.6 GHz