GHSA3P6020AD650V,175mΩ 功率晶体管 PDF下载
产品描述

The GHSA3P6020AD is a typical 20W (P3dB) at +50 V transistor,discrete GaN on SiC HEMT. Ideal for applications in massive MIMO systems, outdoor small cells and remote radio heads in the frequency range from DC to 3.8 GHz. Available in DFN outline.


产品特征

• Frequency: DC to 3.8 GHz 

• Typical Output Power (P3dB)1 : 20 W 

• Linear Gain1 : 20.4 dB 

• Typical DE 3dB1 : 74 % 

• Operating Voltage: 50 V 

• Low thermal resistance package 

• CW and Pulse capable Note 1: @ 2.6 GHz