宏基站及5G
Massive MIMO基站
Part   Number Description Bands(GHz) Gain(dB) Pav(dbm) Psat(dBm) PAE(%) Volt(V) Current(mA) Package Type Package(mm)
GSP1P904AL 1.8G   4W Smallcell High-Eff PA  1.8-1.9 38 28 36.5 31.5 5 400 SMT 5*5
GSP2P204AL 2.1G   4W Smallcell High-Eff PA  2.1-2.2 39 28 36.3 34 5 371 SMT 5*5
GSP2P404AL 2.3G   4W Smallcell High-Eff PA  2.3-2.4 36 28 36.4 35.5 5 355 SMT 5*5
GSP3P604AL 3.5G   4W Smallcell High-Eff PA  3.3-3.6 43 28 38 28 5 450 SMT 5*5


Part   Number Description Bands(GHz) Gain(dB) P1dB(dbm) P3dB(dBm) Volt(V) Current(mA) Package Type Package(mm)
GSP702AQ 1.8-4.2GHz 0.5W 36dB   Gain Driver Amplifier  1.8-4.2 36.5 27.5 28.5 5 110 QFN 3*3


Part   Number Description Band(GHz) Ppeak(W) Gain(dB) Efficiency(%) Vdd(V) Package Type Package(mm)
GHSD6P0008AL 8W,50V,DC-6GHz   GaN RF Transistor DC-6 8 23 71 50 200 14*8
GHSD6P0020AL 20W,50V,DC-6GHz   GaN RF Transistor DC-6 20 21.5 76.5 50 200 14*8
GHSD6P0040AL 40W,50V,DC-6GHz   GaN RF Transistor DC-6 40 20.3 74 50 200 14*8
GHSD6P0050AL 50W,50V,DC-6GHz   GaN RF Transistor DC-6 50 20.3 72.5 50 200 14*8
GHSD6P0060BT 60W,50V,DC-6GHz   GaN RF Transistor DC-6 60 21.5 76 50 360 20.32*17.78
GHSD6P0080BT 80W,50V,DC-6GHz   GaN RF Transistor DC-6 80 18.2 74.3 50 360 20.32*17.78
GHSD6P00100BT 100W,50V,DC-6GHz   GaN RF Transistor DC-6 100 17.9 72.6 50 360 20.32*17.78
GHDA2P7100AD 2.5-2.7GHz,   50V, 100W, Dual GaN Doherty Transistor   2.5-2.7 100 16 57 48 DFN 7*6.5
GHPD2P7060AD  2.5-2.7GHz,   50V, 60W, Dual GaN Doherty Transistor   2.5-2.7 60 16 57 48 DFN 7*6.5
GHSD6P0008AD 0-6GHz,   50V, 8W, GaN Driver DC-6 8 22 73 50 DFN 4*4.5
GHSA3P6020AD DC-3.8GHz,   48V, 20W, GaN Driver DC-3.8 20 20.4 74 50 DFN 4*4.5


Part   Number Description Bands(GHz) Gain(dB) NF(dB) OP1dB(dBm) OIP3(dBm) Volt(V) Current(mA) Package Type Package(mm)
TC5985 5.9-8.5GHz   Ultra Low-Noise LNA 5.9-8.5 16 1.14 14.9 28.3 5 14 DFN 2*2
GSL805AD 0.01-5   GHz High Linearity LNA 0.01-5 22 0.7 22 35.5 5 68 DFN 2*2
GSL809AD 0.5-6   GHz Ultra Wide-Band LNA 0.5-6 22.2 0.65 22.5 33.5 5 70 DFN 2*2