新一代GaN PA与传统的LDMOS PA相比，在功率密度、工作频率、带宽和效率性能上具有大幅度的提升。
SDSX GaN PA采用GaN on SiC HEMT工艺，在连续波、脉冲和LTE/ 5G NR调制信号下工作都具备优异的性能，同时与业界主流氮化镓方案兼容，又具备明显的成本优势和供应保障。
SDSX GaN PA产品涵盖28V系列和50V系列裸Die以及带内匹配的陶瓷封装、塑料封装器件，具有宽带、高效率、高增益的优异特性。
裸Die及陶瓷封装产品功率覆盖8W-100W，均能满足DC-6GHz以内的超宽带应用。内匹配塑封器件完全满足5G 32T320W及64T320W mMIMO的应用。同时，带封装器件可以根据客户需求定制内匹配产品。
| Part Number | Description | Band(GHz) | Ppeak(W) | Gain(dB) | Efficiency(%) | Vdd(V) | Package Type | Package(mm) |
| GHSD6P0008AL | 8W,50V,DC-6GHz GaN RF Transistor | DC-6 | 8 | 23 | 71 | 50 | 200 | 14*8 |
| GHSD6P0020AL | 20W,50V,DC-6GHz GaN RF Transistor | DC-6 | 20 | 21.5 | 76.5 | 50 | 200 | 14*8 |
| GHSD6P0040AL | 40W,50V,DC-6GHz GaN RF Transistor | DC-6 | 40 | 20.3 | 74 | 50 | 200 | 14*8 |
| GHSD6P0050AL | 50W,50V,DC-6GHz GaN RF Transistor | DC-6 | 50 | 20.3 | 72.5 | 50 | 200 | 14*8 |
| GHSD6P0060BT | 60W,50V,DC-6GHz GaN RF Transistor | DC-6 | 60 | 21.5 | 76 | 50 | 360 | 20.32*17.78 |
| GHSD6P0080BT | 80W,50V,DC-6GHz GaN RF Transistor | DC-6 | 80 | 18.2 | 74.3 | 50 | 360 | 20.32*17.78 |
| GHSD6P0100BT | 100W,50V,DC-6GHz GaN RF Transistor | DC-6 | 100 | 17.9 | 72.6 | 50 | 360 | 20.32*17.78 |
| GHDA2P7100AD | 2.5-2.7GHz, 50V, 100W, Dual GaN Doherty Transistor | 2.5-2.7 | 100 | 16 | 57 | 48 | DFN | 7*6.5 |
| GHPD2P7060AD | 2.5-2.7GHz, 50V, 60W, Dual GaN Doherty Transistor | 2.5-2.7 | 60 | 16 | 57 | 48 | DFN | 7*6.5 |
| GHSD6P0008AD | 0-6GHz, 50V, 8W, GaN Driver | DC-6 | 8 | 22 | 73 | 50 | DFN | 4*4.5 |
| GHSA3P6020AD | DC-3.8GHz, 48V, 20W, GaN Driver | DC-3.8 | 20 | 20.4 | 74 | 50 | DFN | 4*4.5 |
